Emitter Follower Voltage Regulator Pdf Download Penale Finson Infini

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How to Design an Emitter Follower Voltage Regulator Circuit

An emitter follower voltage regulator is a type of transistor series voltage regulator that uses an NPN transistor and a zener diode to provide a stable output voltage. The transistor is connected in an emitter follower configuration, which means that the output voltage is equal to the input voltage minus the base-emitter voltage drop. The zener diode provides a reference voltage that controls the base current of the transistor and thus regulates the output voltage.

In this article, we will explain the working principle, design considerations, advantages and limitations of an emitter follower voltage regulator circuit. We will also show you how to download a PDF file that contains a detailed schematic and simulation of the circuit using penale finson infini software.

Working Principle of Emitter Follower Voltage Regulator

The basic circuit diagram of an emitter follower voltage regulator is shown below:

The unregulated input voltage Vin is applied to the collector of the transistor Q and the regulated output voltage Vout is obtained across the load resistor RL. The zener diode D has a breakdown voltage VZ that determines the reference voltage for the base of the transistor Q. The resistor RB limits the current through the zener diode and provides a path for the base current of the transistor Q.

The operation of the circuit can be explained as follows:

If Vin increases, Vout tends to increase as well. This causes a decrease in VBE, which reduces the base current IB and hence the emitter current IE. This increases the collector-emitter resistance RCE of the transistor Q, which reduces Vout. Thus, Vout remains constant.

If Vin decreases, Vout tends to decrease as well. This causes an increase in VBE, which increases the base current IB and hence the emitter current IE. This decreases the collector-emitter resistance RCE of the transistor Q, which increases Vout. Thus, Vout remains constant.

If RL decreases (i.e., load current IL increases), Vout tends to decrease as well. This causes an increase in VBE, which increases the base current IB and hence the emitter current IE. This compensates for the decrease in RL, and keeps Vout constant.

If RL increases (i.e., load current IL decreases), Vout tends to increase as well. This causes a decrease in VBE, which decreases the base current IB and hence the emitter current IE. This compensates for the increase in RL, and keeps Vout

The output voltage can be expressed as: $V_{out} = V_Z - V_{BE}$ where $V_{BE}$ is typically 0.6V for silicon transistors.

The maximum load current can be given by: $I_L(max) = I_E(max) = \frac{V_{in}(min) - V_Z}{R_B + (\beta + 1)R_L}$ where $\beta$ is the current gain of the transistor Q.

The minimum input current can be given by: $I_{in}(min) = I_Z + I_C(min) = \frac{V_Z}{R_B} + \frac{V_{in aa16f39245